View RF2172_362385.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

RF2172
2
Typical Applications * BluetoothTM PA * 2.4GHz to 2.5GHz ISM Band Systems * 902MHz to 928MHz ISM Band Systems * 3.6V Spread-Spectrum Cordless Phones * Portable Battery-Powered Equipment * Spread-Spectrum Systems
ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL
2
POWER AMPLIFIERS
Product Description
The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth applications and frequency hopping/direct sequence spread-spectrum cordless telephones or other applications in the 902MHz to 928MHz ISM band. The device is packaged in a compact 4mmx4mm LCC. The device features analog gain control to optimize transmit power while maximizing battery life in portable equipment requiring up to 100mW transmit power at the antenna port.
BLUETOOTH is a trademark owned by the Bluetooth SIG, Inc., and licensed to RF Micro Devices, Inc.
2 3.75 0.75 0.50 0.45 0.28 0.80 TYP 1
1
3.75
+
1.60 4.00
12 1.50 SQ 3 INDEX AREA 3.20 4.00 1.00 0.90
0.75 0.65
NOTES:
1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal and is measured 0.10 mm and 0.25 mm from terminal tip.
0.05 0.00
Dimensions in mm.
The terminal #1 identifier and terminal numbering conv 3 shall conform to JESD 95-1 SPP-012. Details of termin identifier are optional, but must be located within the z indicated. The identifier may be either a mold or marke feature. 4 5 Pins 1 and 9 are fused. Package Warpage: 0.05 max.
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
Package Style: LCC, 16-Pin, 4x4
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features * 23.5dBm Typical Output Power * 0dB to 28dB Variable Gain * 45% Efficiency at Max Output * On-Board Power Down Mode * 2.4GHz to 2.5GHz Operation * 902MHz to 928MHz Operation
GND
GND
GND 14 8 GND
1 GND 2 RF IN 3 GND 4 5 GND
16
15
13 12 RF OUT 11 RF OUT
Bias 6 VPD 7 APC
GND 10 GND 9 GND
VCC
Ordering Information
RF2172 ISM Band 3.6V, 250mW Amp with Analog Gain Control RF2172 PCBA-H Fully Assembled Evaluation Board 2.4to2.5GHz RF2172 PCBA-L Fully Assembled Evaluation Board 902to928MHz RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Functional Block Diagram
Rev A9 010823
2-213
RF2172
Absolute Maximum Ratings Parameter
Supply Voltage (RF off) APC Current (Maximum) Control Voltage (VPD) Input RF Power Operating Case Temperature Storage Temperature
Rating
-0.5 to +6.0 +10 -0.5 to +6.0 +10 -40 to +85 -55 to +155
Unit
VDC mA VDC dBm C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Usable Frequency Range Input Impedance Input VSWR Output Load VSWR
Specification Min. Typ. Max.
500 to 2500 50 1.8:1 <10:1 <6:1
Unit
MHz
Condition
T=25C, V CC =3.6V, V PD =3.6V, VAPC =2.5V
Without Input Match 02.45GHz Operation
Operating Frequency Maximum Output Power Total Efficiency Reverse Isolation Second Harmonic Third Harmonic All Other Spurious Output Load Impedance Gain Control Voltage High Gain Low Gain 22 2.4 to 2.5 +23.5 45 -25 -45 -40 -50 20-j4.5 0 to VCC 24.5 GHz dBm % dB dBc dBc dBc
Present to part V dB dB MHz dBm % dB dBc dBc dBc V dB/V dB V mA mA A mA mA VAPC =3.6V, V CC =3.6V, PIN =0dBm VAPC =0V, V CC =3.6V, PIN =0dBm Freq=902MHz to 928MHz, PIN =-3.0dBm
+22 -10 902 to 928 +24 58 -35 -40 -40 -50 20-j1.6 0 to VCC 20 0 to 28 3.6 145 35 2.8 4.5 2.25
902MHz Operation
Operating Frequency Maximum Output Power Total Efficiency Reverse Isolation Second Harmonic Third Harmonic All Other Spurious Output Load Impedence Gain Control Voltage Gain Control Slope Gain
Present to part
Power Supply
Power Supply Voltage Power Supply Current Idle Current V CC =3.6V, VAPC =3.6V, PIN =-3dBm, V PD =3.6V V PD =3.6V, VAPC =3.6V, RF PIN <-30dBm V CC =3.6V, VAPC =0V, V PD =0V total ICC V CC =3.6V, V PD =3.6V into PD pin V CC =3.0V, V PD =3.0V into PD pin
Power Down Current
I(PD) I(PD)
10
2-214
Rev A9 010823
RF2172
Pin 1 2 3 4 5 6 Function GND GND RF IN GND GND VPD Description
Ground connection. For best performance, keep traces physically short and connect immediately to the ground plane. Ground connection for the driver stage. For best performance, keep traces physically short and connect immediately to the ground plane. RF input. This is a 50 input. No external matching is needed. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. See pin 1. See pin 1. Power down pin. When this pin is 0V, the device will be in power down mode, dissipating minimum DC power. This pin also serves as the VCC supply pin for the bias circuitry. VPD should be at the supply voltage when the part is not in power down mode. Analog power control. Output power varies as a function of the voltage on this pin. See graph. This pin must be driven through a series resistor with a voltage between 0V and VCC. Series resistor determines dynamic range of power control. See plot "POUT versus Gain Control versus Gain Control Resistor".
Interface Schematic
See pin 15.
2
POWER AMPLIFIERS
RF IN 1st Stage
7
APC
APC Bias Network
8 9 10 11 12
GND GND GND RF OUT RF OUT
See pin 1. See pin 1. See pin 1. RF output. An external matching network is required to provide the opti- See pin 15. mum load impedance at this pin. See pin 15. RF output and power supply for the output stage. Bias voltage for the output stage is provided through this pin. A shunt cap resonating with the bond wire inductance at 2xf0 can also be used at this pin to provide a second harmonic trap. See pin 1. See pin 1. Power supply for driver stage and interstage matching. This pin forms the shunt inductance needed for proper tuning of the interstage. Refer to the application schematic for the proper configuration. Note: Position and value of the components are important.
VCC
13 14 15
GND GND VCC
Inductor Pin 15 Bond Wire RF IN 1st Stage
External Cap
GND RF OUT RF OUT 2nd Stage
16 Pkg Base
GND GND
See pin 1. Ground connection for the output stage. This pad should be connected to the groundplane by vias directly under the device. A short path is required to obtain optimum performance, as well as provide a good thermal path to the PCB for maximum heat dissipation.
Rev A9 010823
2-215
RF2172
Application Schematic - 915MHz
VCC
22 nF
3.9 nH
2
POWER AMPLIFIERS
1 2 22 nF RF IN 3 4 5 6 Bias 7 8 11 10 9 2.7 nH 4 pF 16 15 14 13 12 3.9 nH 22 nF RF OUT 4 pF 22 nF VCC
RAPC 3k
22 nF
22 nF
VPD APC
Application Schematic - 2.45GHz
VCC 22 nF 10 4 pF
1 2 22 nF RF IN 0.5 pF 3 4 5
16
15
14
13 12 1.5 nH 11
22 nF
VCC
22 nF RF OUT 1.5 pF
Bias 6 7 8
10 9
5 pF
5 pF
VCC
10
200 VAPC
22 nF
22 nF
2-216
Rev A9 010823
RF2172
Evaluation Board Schematic - 915MHz
(Download Bill of Materials from www.rfmd.com).
VCC2 P1-1 22 nF L1 3.9 nH R1* OPEN P1 1 2 P1-3 3 CON3 VCC2 P2-1 GND VCC3 P2-3 P2 1 2 3 CON3 VAPC GND VCC1
2
POWER AMPLIFIERS
1 C2 22 nF 2 3 4 5
16
15
14
13 12 11
C7 4 pF L3 3.9 nH L2 2.7 nH
C8 22 nF VCC3 C6 22 nF C5 4 pF 50 strip
J1 RF IN
50 strip
Bias 6 7 8
10 9
J2 RF OUT
R2 3k VCC1 C3 22 nF C4 22 nF VAPC
Rev A9 010823
2-217
RF2172
Evaluation Board Schematic - 2.45GHz
VCC2 P1-1 P1 1 2 P1-3 3 CON3 L1 1.5 nH VCC3 C9 22 nF C8 22 nF C7 1.5 pF 50 strip VCC2 P2-1 GND VCC3 P2-3 P2 1 2 3 CON3 VAPC GND VCC1
2
POWER AMPLIFIERS
1 C2 22 nF C1 0.5 pF 2 3 4 5
C11 22 nF C10 4 pF 16
R3 10
15
14
13 12 11
J1 RF IN
50 strip
Bias 6 7 8 C6 5 pF R2 200
10 9
J2 RF OUT
C3 5 pF R1 10 VCC1 C4 22 nF
2172401-
VAPC C5 22 nF
2-218
Rev A9 010823
RF2172
Evaluation Board Layout - 915MHz Board Size 0.80" x 0.85"
Board Thickness 0.031", Board Material FR-4
2
POWER AMPLIFIERS
Evaluation Board Layout - 2.45GHz Board Size 0.800" x 0.924"
Board Thickness 0.031", Board Material FR-4
Rev A9 010823
2-219
RF2172
30.0
POUT versus PIN VCC=3.6V, VAPC=3.6V, Freq=915MHz
Pout -40 Pout 25 Pout 85
30.0
POUT versus PIN VCC=3.0V, VAPC=3.0V, Freq=915MHz
Pout -40 Pout 25 Pout 85
25.0
25.0
20.0
20.0
POUT (dBm)
POWER AMPLIFIERS
10.0
POUT (dBm)
-20.0 -15.0 -10.0 -5.0 0.0 5.0
2
15.0
15.0
10.0
5.0
5.0
0.0
0.0
-5.0
-5.0
-10.0 -25.0
-10.0 -25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
PIN (dBm)
PIN (dBm)
70.0
Efficiency versus PIN VCC=3.6V, VAPC=3.6V, Freq=915MHz
Eff (%) -40
0.18
ICC versus PIN VCC=3.6V, VAPC=3.6V, Freq=915MHz
Icc -40 Icc 25 Icc 85
60.0
Eff (%) 25 Eff (%) 85
0.16
0.14 50.0
Efficiency (%)
0.12
ICC (A)
-20.0 -15.0 -10.0 -5.0 0.0 5.0
40.0
0.10
30.0 0.08 20.0 0.06 10.0
0.04
0.0 -25.0
0.02 -25.00
-20.00
-15.00
-10.00
-5.00
0.00
5.00
PIN (dBm)
PIN (dBm)
30.0
POUT versus VAPC VCC=3.6V, Freq=915MHz, PIN=-3dBm
Pout -40 Pout 25 Pout 85
0.16 0.15 0.14 0.13 0.12
ICC versus VAPC VCC=3.6V, Freq=915MHz, PIN=-3dBm
Icc -40 Icc 25 Icc 85
25.0
20.0 0.11
15.0
POUT (dBm)
ICC (A)
0.10 0.09 0.08
10.0
5.0
0.07 0.06
0.0 0.05 -5.0 0.04 0.03 -10.0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 0.02 0.00
0.30
0.60 0.90 1.20 1.50 1.80 2.10
2.40 2.70 3.00 3.30 3.60
VAPC (V)
VAPC (V)
2-220
Rev A9 010823
RF2172
0.6
IAPC versus VAPC VCC=3.6V, VPD=3.6V, Freq=915MHz
Iapc[mA] -40
30.0
POUT versus Gain Control versus RAPC VCC=3.6V, PIN=-3dBm, Freq=915MHz
Rapc (3k) Rapc (3.5k) Rapc (4k)
0.4
Iapc[mA] 25 Iapc[mA] 85
25.0
20.0 0.2 15.0 0.0
POUT (dBm)
IAPC (mA)
2
POWER AMPLIFIERS
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6
10.0
-0.2
5.0 -0.4 0.0 -0.6
-5.0
-0.8 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6
-10.0
VAPC (V)
VAPC (V)
30.0
POUT versus PIN versus RAPC VCC=3.6V, VAPC=3.6V, Freq=915MHz
Rapc (3k)
30.0
POUT versus PIN VCC = VAPC = 3.6V, Freq = 2.45 GHz
Pout@-40C Pout@+25C Pout@+85C
25.0
Rapc (3.5k) Rapc (4k)
25.0
20.0 20.0
15.0
POUT (dBm)
-20.0 -15.0 -10.0 -5.0 0.0 5.0
15.0
POUT (dBm)
10.0
10.0
5.0 5.0 0.0 0.0
-5.0
-5.0 -25.0
-10.0 -25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
PIN (dBm)
PIN (dBm) ICC versus PIN VCC = VAPC = 3.6 V, Freq = 2.45 GHz
Icc@-40C Icc@+25C 0.20 Icc@+85C
50.0 45.0 40.0 35.0
Efficiency versus PIN VCC = VAPC = 3.6 V, Freq = 2.45 GHz
Eff@-40C Eff@+25C Eff@+85C
0.25
Efficiency (%)
30.0 25.0 20.0 15.0 10.0 5.0 0.0 -25.0
0.15
ICC (A)
0.10 0.05 0.00 -25.00
-20.0
-15.0
-10.0
-5.0
0.0
5.0
-20.00
-15.00
-10.00
-5.00
0.00
5.00
PIN (dBm)
PIN (dBm)
Rev A9 010823
2-221
RF2172
25.0
POUT versus VAPC VCC = 3.6 V, Freq = 2.45 GHz, PIN = 0 dBm
Pout@-40C Pout@+25C Pout@+85C
0.18 0.16 0.14 0.12
POUT versus VAPC VCC = 3.6 V, Freq = 2.45 GHz, PIN = 0 dBm
Icc@-40C Icc@+25C Icc@+85C
20.0
15.0
POUT (dBm)
POUT (dBm)
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
2
POWER AMPLIFIERS
10.0
0.10 0.08 0.06
5.0
0.0
-5.0
0.04 0.02 0.00 0.00
-10.0
-15.0
0.40
0.80
1.20
1.60
2.00
2.40
2.80
3.20
3.60
VAPC(V)
VAPC (V) POUT versus PIN VCC - VAPC = 3.0 V, Freq = 2.45 GHz
Pout@-40C Pout@+25C Pout@+85C 15.0
30.0 20.0
f0, 2f0 over Frequency VCC =VAPC =3.6 V, PIN = 0 dBm
0.0
25.0
-10.0 10.0 0.0 -20.0
20.0
POUT (dBm)
-10.0 -20.0 -30.0 -40.0
f0@ -40C f0@ +85C 2f0@ +25C
f0@ +25C 2f0@ -40C 2f0@ +85C -40.0 -30.0
2f0 (dBc)
f0 (dBm)
10.0
5.0
0.0
-50.0 -50.0 -60.0 2400.0 2420.0 2440.0 2460.0 2480.0 -60.0 2500.0
-5.0
-10.0 -25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
Frequency (MHz)
PIN (dBm) Efficiency versus PIN VCC = VAPC = 3.0 V, Freq = 2.45 GHz
Eff@-40C 45.0 40.0 35.0 Eff@+25C Eff@+85C
0.16
ICC versus PIN VCC = VAPC = 3.0 V, Freq = 2.45 GHz
Icc@-40C Icc@+25C Icc@+85C
50.0
0.14
0.12
Efficiency (%)
-20.00 -15.00 -10.00 -5.00 0.00 5.00
0.10
30.0 25.0 20.0 15.0
ICC (A)
0.08
0.06
0.04 10.0 0.02 5.0 0.0 -25.0
0.00 -25.00
-20.0
-15.0
-10.0
-5.0
0.0
5.0
PIN (dBm)
PIN (dBm)
2-222
Rev A9 010823
RF2172
25.0
POUT versus VAPC VCC = 3.0 V, Freq = 2.45 GHz, PIN = 0 dBm
Pout@-40C Pout@+25C Pout@+85C
0.14
ICC versus VAPC VCC = 3.0 V, Freq = 2.45 GHz, PIN = 0 dBm
Icc@-40C Icc@+25C Icc@+85C
20.0
0.12
15.0 0.10
POUT (dBm)
10.0
ICC (A)
0.08
2
POWER AMPLIFIERS
0.50 1.00 1.50 2.00 2.50 3.00
5.0
0.06
0.0 0.04 -5.0 0.02
-10.0
-15.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.00 0.00
VAPC (V) POUT versus PIN over R2 VCC = VAPC = 3.6 V, Freq = 2450 MHz
Pout(100) Pout(200) Pout(300) Pout(400)
VAPC (V) ICC versus PIN over R2 VCC = VAPC = 3.6 V, Freq = 2450 MHz
Icc(100) Icc(200) Icc(300) 0.20 Icc(400)
30.0
0.25
25.0
20.0
POUT (dBm)
15.0
0.15
10.0
ICC (A)
0.10 0.05 -20.0 -15.0 -10.0 -5.0 0.0 5.0 0.00 -25.00
5.0
0.0
-5.0
-10.0 -25.0
-20.00
-15.00
-10.00
-5.00
0.00
5.00
PIN (dBm) Efficiency versus PIN over R2 VCC = VAPC = 3.6 V, Freq = 2450 MHz
Eff(100) 45.0 40.0 35.0 Eff(200) Eff(300) Eff(400) 0.008 0.010
PIN (dBm) IAPC versus VAPC over R2 VCC = 3.6 V, PIN = 0 dBm, Freq = 2450 MHz
Iapc(100) Iapc(200) Iapc(300) Iapc(400)
50.0
0.012
Efficiency (%)
30.0
0.006
IAPC (A)
25.0 20.0 15.0
0.004
0.002
0.000 10.0 5.0 0.0 -25.0 -0.002
-20.0
-15.0
-10.0
-5.0
0.0
5.0
-0.004 0.000
0.400
0.800
1.200
1.600
2.000
2.400
2.800
3.200
3.600
PIN (dBm)
VAPC (V)
Rev A9 010823
2-223
RF2172
2
POWER AMPLIFIERS
2-224
Rev A9 010823

▲Up To Search▲

Price & Availability of RF2172

	To Download RF2172 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .